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| 2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25) 2. COLLECTOR 3. BASE 123 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless otherwise specified) Test conditions MIN 40 30 5 1 1 60 960 0.5 100 3.5 V MHz pF TYP MAX UNIT Ic=100A, IE=0 Ic=1mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, f=1MHz V V V A A CLASSIFICATION OF hFE Rank Range D 60-120 E 100-200 F 160-320 G 280-560 H 480-960 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com |
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